Method for producing electronic componets

ABSTRACT

A method for producing an electronic component is provided. The method includes providing at least one die on a wafer, the at least one die having at least one sensor-technologically active and/or emitting device on at least a first side; producing at least one patterned support having at least one structure which is functional for the at least one sensor-technologically active and/or emitting device; joining the wafer with the at least one patterned support so that the first side faces the at least one patterned support; and separating the at least one die from the wafer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a method for producing electronic components,and to a housed electronic component. In particular, the inventionrelates to a method for producing housed electronic components joined ina wafer having a patterned support, and to a housed electronic componenthaving a patterned support.

2. Description of Related Art

Integrated electronic components are produced nowadays by employing,inter alia, various wafer level packaging methods. Inter alia, thismethod is also used to produce optoelectronic components. For thispurpose, the components are provided with light-transmissive coveringswhich protect the light-sensitive components from ambient influences,such as moisture, for example, or for instance from mechanical damage.

However, in this case, mechanical and optical functions have hithertobeen realized independently of the actual housing of the semiconductorin the case of later mounting. Thus, by way of example, opticalarrangements, such as plastic objectives or glass fibers, are connectedto the housed optical chip after the production thereof. However, thisinevitably leads to large manufacturing tolerances in comparison withthe high accuracy that can otherwise be achieved in the production ofintegrated circuits. Moreover, after dicing, that is to say separationof the chips or dies from the wafer, the finished housed components haveto be realigned and reoriented before the optical elements are emplaced,which leads to additional manufacturing steps and correspondingly slowsdown production and makes it more expensive.

SUMMARY OF THE INVENTION

Therefore, the invention is based on the object of avoiding or at leastalleviating these disadvantages in the production and the constructionof electronic components, such as, in particular, optoelectroniccomponents.

This object is already achieved in a surprisingly simple manner by meansof a method and an electronic component in accordance with the presentinvention.

Accordingly, the method according to the invention for producing anelectronic component comprising at least one semiconductor elementhaving at least one sensor-technologically active and/or emitting deviceon at least one side, the method comprising the following steps:

-   -   provision of at least one die on a wafer,    -   production of at least one patterned support having at least one        structure which is functional for the sensor-technologically        active and/or emitting device,    -   joining together of the wafer with the at least one support, so        that that side of the die which has the sensor-technologically        active and/or emitting device faces the support,    -   separation of the die.

In this connection, an electronic component is understood to be acomponent which can convert electrical signals into other signals,and/or other signals into electrical signals. In particular, it isunderstood to mean optoelectronic components, which can convert opticalsignals into electrical signals and vice versa. However, the termelectronic component also equally encompasses other sensor-technologicaland/or emitting elements which, by way of example, can convert physicalmeasurement quantities such as sound or pressure or chemical measurementquantities such as concentrations, for example, into electrical signalsor vice versa.

In the method according to the invention, the components are joinedtogether with the support, which is provided with structures which arefunctional for the sensor-technologically active and/or emitting device,whilst already joined in a wafer. This enables the structures of thesupport to be oriented exactly with respect to thesensor-technologically active and/or emitting device, such as, forexample, a photoelectric sensor layer. Furthermore, the method accordingto the invention also integrates the wafer level packaging through theapplication of the patterned support at least partially with theprovision of further functional structures or elements, such as, forexample, optical lenses for optoelectric components. This saves furtherprocess steps in the production of such sensor-technologically activeand/or emitting components. Moreover, the dimensions of the componentcan be made considerably smaller through the greater proximity of thefunctional structures of the support to the sensors or emittingstructures on the chip, which makes a significant contribution to theminiaturization of such electronic components.

In a particularly advantageous manner, the method according to theinvention may also comprise the production of a multilayer patternedsupport. In this case, these layers may also have different materials.Thus, it is possible, by way of example, to combine transparent layersmade of glass or plastic with semiconductor layers.

In particular, it is advantageous if the individual layers in each casehave at least one structure which is functional for thesensor-technologically active and/or emitting device. By way of example,it is possible in this way to assemble multi-element opticalarrangements for optoelectronic components.

The patterning may be effected in the state joined together with thewafer. By way of example, polyreflow lenses may be applied on thesupport. The patterning in the joined-together state is alsoadvantageous, inter alia, when the support is so thin that thepatterning operation, for instance by means of mechanical processing,would destroy the support. By virtue of being joined together with thewafer, the support is supported and will thus impart an increasedstrength to the construction, which enables the non-destructiveprocessing of the support.

A prefabrication of structures on the support before thejoining-together process is also advantageous. The support with theprefabricated structures can then be oriented exactly with respect tothe wafer when being joined together with side wafer, by way of example.The prefabrication of the structures and the subsequent connection tothe wafer permit the use of materials on the semiconductor which wouldnot withstand the preliminary processes of the patterning of thesupport. By way of example, this makes it possible to usebiosensor-technological receptors or organic microlenses on thesemiconductor element.

The individual layers of the multilayer patterned support need not firstbe connected to one another before this composite is joined togetherwith the wafer. Rather, it is also advantageous if the process ofjoining together with the support is carried out in such a way thatindividual layers are joined to the wafer, for example the compositecomprising wafer and the layers already joined together with the latter.By way of example, each layer can then be oriented separately to thestructures of the wafer. Moreover, this also enables a patterning of thelayers fixed on the wafer or, by way of example, a mechanical thinningof the layers in the wafer composite.

The production of the support may be carried out for example by means oflithographic patterning. This may be performed by the use of suitableshadowmasks or else by the molding of a preform producedlithographically (LIGA method).

In order to produce suitable functional structures of the support, thelatter may be patterned both negatively and positively.

In this case, the negative patterning is preferably produced by dryetching and/or wet-chemical etching and/or mechanical grinding, orgrinding and/or mechanical lapping. Positive structures can be produced,inter alia, by means of vapor deposition, sputtering of material, CVD orPVD coatings, plating or stencil printing and resist coating.

Patterned supports having spacers for optical elements are of interest,inter alia, for miniaturized optical arrangements. By virtue of the highaccuracy which can be achieved in the positioning of the support and thehigh parallelism of wafer surface and support which is achieved by theprocess of joining together in the wafer composite, it is possible toconstruct, even at a miniature scale, for example in the case ofoptoelectronic components, precision optical arrangements for thesensor-technologically active and/or emitting devices of the dies on thewafer, which, after the separation, or dicing, of the wafer, form thesemiconductor elements of the electronic components.

Moreover, receptacles can be produced in the support, which receptaclesmay receive, by way of example, fluids, for instance for sensorapplications in fluidics or for chemical sensors, optical elements,microelectronic components or active or passive electronic elements. Thereceptacles may also receive, with an accurate fit, separate sensor oremitter components, for example piezoelectric pressure sensors orpiezoelectric emitters, such as, for instance, ultrasonic emitters.

Cavities are also taken into consideration as further functionalstructures. In particular, the patterned support may in this case beproduced in such a way that at least one resonator space is defined inthe component. These cavities defined in the support or between supportand semiconductor element may in this case also be at least partly open.A cavity may also advantageously surround the surface of thesensor-technologically active and/or emitting device or optical elementsarranged thereon and thus protect said surface or elements from damage,for example.

For many applications, mechanical fits are also particularlyadvantageous as structures of the support. By way of example, a fit fora waveguide may be produced in the support. In this case, too, the highaccuracy which can be achieved in the orientation of the support withthe wafer in the wafer composite may once again advantageously beutilized in order to bring the waveguide core into precise orientationwith a sensor or emitter structure on the die or chip. Equally, amechanical fit may also serve for the orientation of other functionalelements, such as, for instance, lenses or further supports. These mayalso be mounted in later manufacturing processes, for instance after thedicing of the wafer. Even during the subsequent mounting of furtherelements, the precision which can be achieved in the assembly of supportand wafer in the wafer composite and the accuracy thus achieved in theorientation of the fit are transferred to the further elements.

Moreover, the support may be patterned in such a way that it itselfcomprises optical components such as, for instance, lenses or gratingsas functional structures. In an advantageous manner, the support mayfurthermore be produced in such a way that it has at least one passageas a functional structure. Such passages may fulfil the task, inparticular, of producing a connection to the sensor-technologicallyactive and/or emitting device or sensor or emitter structure withrespect to other functional structures or with respect to thesurroundings of the component.

What are taken into consideration as optical components which can beintegrated into the support during the production thereof are, interalia, generally concave and/or convex lenses, Fresnel lenses or prismlenses, gratings, in particular phase gratings, and/or prisms. Prismsmay be combined for example in combination with guides or fits forwaveguides in order that the light from waveguides guided along thesurface of the component is diverted to the sensor-technologicallyactive and/or emitting device.

Finally, trenches, in particular V-grooves, are also suitable asfunctional structures for specific applications. In this case, a trenchor a V-groove extends on the support preferably in a direction along thesurface of the support. Such grooves or trenches may be used, interalia, for receiving and fixing waveguides. By way of example, thisresults, as described above, in an advantageous combination of V-groovesas guides for waveguides in conjunction with prisms as light-divertingelements.

The method according to the invention can also advantageously beextended in such a way that the joining together of the wafer with theat least one patterned support additionally comprises the step ofjoining together with at least one further support acting as a spacer.In this way, one or a plurality of patterned supports acting as a spacercan be combined with one another and/or with a support, which havefurther functional structures, such as lenses, mechanical fits or thelike.

Inter alia, the support may advantageously be produced from asemiconductor material, in particular silicon or gallium arsenide.Indium phosphide, which otherwise has to be hermetically sealed, mayalso be used as support material, it being possible to obtain thehermetic sealing for example by means of further layers of the supportwhilst actually in the wafer composite. The abovementioned semiconductormaterials can be processed precisely by known methods in order toproduce the respective functional structures. Glass, in particularquartz glass, and/or metal as material for the supports may also be usedin an advantageous manner depending on the intended area of use of thecomponent. Interesting properties may also be achieved, inter alia, withglass foams or metal foams.

Generally, low-k dielectrics may also advantageously be used, forexample in order to reduce parasitic capacitances on the components andthus to improve the radio frequency properties of the components.Various plastics or foamed materials, such as foamed glasses, may beused, inter alia, as low-k materials. This is also advantageous inparticular when the semiconductor component comprises a radio frequencycomponent.

Sapphire as support material also has outstanding properties for someapplications, for example on account of its high thermal conductivityand UV transmissivity.

Furthermore, composite materials, ceramics or plastics or many otherinorganic and organic materials may advantageously be used as supportmaterial depending on area of application and purpose.

In particular, support and wafer may comprise an identical material.This affords the possibility, inter alia, of processing the wafer withthe dies and the support by means of the same methods in a manner thatsaves costs.

Wafer and support may furthermore be produced in such a way that theyhave thermal expansion coefficients which are adapted to one another atthe interfaces which face one another. It is thus possible to avoid, orreduce, thermal stresses between wafer and support. Examples of suitablematerials are kovar for GaAlAs wafers and D263 glass for the support.The glasses AF45, AF37 or B33 may be used, inter alia, for Si (100)wafers.

In particular, anodic bonding of the wafer to the support is suitable inorder to join together wafer and support. Also conceivable, however,depending on the materials used, are adhesive bonds, for example withpolymers and/or epoxy adhesives, connection by means of alloy solderingof previously metallized regions of the wafer and/or of the support, andalso diffusion welding or connection by means of glass solders. If thesupport comprises more than one layer, the various joining-togethermethods may also be combined with one another. In particular forsupports comprising glass, glass soldering may also advantageously beused for the joining-together process.

In order to facilitate the dicing of the overall construction comprisingwafer and support, separating points may additionally be inserted intothe support during the patterning of the support.

Furthermore, the method may also be developed in such a way that, inaddition to the structures on the support, functional structures areproduced on a side opposite to that side of the die which has thesensor-technologically active and/or emitting device. Thus, by way ofexample, signals coming from two sides can be fed to the componentwithout impairing sensor-technological functions on the side of thecomponent having the sensor-technologically active and/or emittingdevice.

The invention also provides for the provision of an electronic componenthaving a construction that is improved with regard to the abovementioneddisadvantages of electronic components. Accordingly, an electroniccomponent according to the invention, which, in particular, is producedaccording to the method described above and comprises the at least onesemiconductor element, has a sensor-technologically active and/oremitting device on a first side, the semiconductor element being coveredon the first side with a patterned support additionally having at leastone structure which is functional for the sensor-technologically activeand/or emitting device.

The functional structures of the support may have been produced forexample by means of dry etching, wet-chemical etching, mechanicalgrinding, or grinding, mechanical lapping, vapor deposition, sputtering,CVD or PVD coating, plating or by means of stencil printing or resistcoating.

In this case, the patterned support of the electronic component mayserve, inter alia, as a spacer in order to produce a spacing between thesensor-technologically active and/or emitting device of thesemiconductor element and a functional element, such as, for example, alens for an optoelectronic component.

The patterned support may also be configured in such a way that itdefines a receptacle. In particular, such a receptacle may receivefluids, optical elements, microelectronic components, active or passiveelectronic elements or else piezoelectric components.

Moreover, the patterned support may advantageously have a mechanicalfit, thereby enabling, inter alia, an accurately defined position of anelement fitted therein, such as of a waveguide, for instance.

For specific applications of components according to the invention,however, functional structures may be situated not only on that side ofthe component which has the sensor-technologically active and/oremitting device. Rather, the component may have such structures on theopposite side as well.

The support on the semiconductor element may, in particular, have aplurality of layers, in which case said layers may also be composed ofdifferent materials. The layers may in each case have at least onestructure which is functional for the sensor-technologically activeand/or emitting device. What may be involved in this case, inparticular, are respectively different functional structures which arecombined with one another by means of the sequence of layers. Thus, foroptoelectronic components, for example, layers which have a passage andact as a spacer may be combined with layers which have lenses. Such acomponent is then distinguished by a complex, multi-element opticalarrangement which is placed with high accuracy directly on thesemiconductor element.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is explained in more detail below using preferredembodiments and with reference to the accompanying drawings. In thiscase, identical reference symbols refer to identical or similar parts.

In the figures:

FIG. 1A shows a cross section through an embodiment of the inventionwith a support patterned as a passage,

FIG. 1B shows a variant of the embodiment shown in FIG. 1A,

FIG. 2 shows a cross section through an embodiment of the invention witha support patterned as a mechanical fit for spherical lenses,

FIG. 3 shows a cross section through an embodiment of the invention witha support patterned as a mechanical fit for optical lenses,

FIG. 4 shows a cross section through an embodiment of the invention witha support patterned as a mechanical fit for a waveguide,

FIG. 5 shows a cross section through an embodiment of the invention witha transparent patterned support with a lens,

FIG. 6 shows a cross section through a modification of the embodiment ofthe invention illustrated in FIG. 5 with a prism lens,

FIG. 7 shows a cross section through an embodiment of the invention witha multi-layered patterned support with a lens,

FIG. 8 shows a cross section through a modification of the embodiment ofthe invention illustrated in FIG. 7 with a prism lens,

FIG. 9 shows a further embodiment with a multilayer patterned support,

FIG. 10 shows an embodiment with functional structures on opposite sidesof the electronic component,

FIG. 11 shows an embodiment with cavities on opposite sides of thesemiconductor element, and

FIG. 12 shows a cross section through a stack comprising wafer andpatterned support which is assembled in the wafer composite.

DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1A illustrates a cross section through a first embodiment of anelectronic component according to the invention, which is designated inits entirety by 1. The electronic component 1 comprises a semiconductorelement or die 3 having a sensor-technologically active and/or emittingdevice 7 on a first side 5, which is referred to as the top sidehereinafter. The sensor-technologically active and/or emitting device 7may be, by way of example, a photoelectric layer for convertingelectrical signals into optical signals or vice versa. On its top side5, the semiconductor element 3 is joined together with the underside 13of a patterned support 9. The connection between component 3 andpatterned support 9 is imparted by means of a connecting layer 15situated between these parts.

The patterned support 9 has a passage opening 17 as a structure 11 whichis functional for the sensor-technologically active and/or emittingdevice 7. Said passage opening defines a cavity 18 together with thecovering 19—applied to the support 9—and the top side 5 of thesemiconductor element 3. Given a suitable choice of the connecting layer15, the cavity 18 can be hermetically partitioned from the surroundings,so that, by way of example, no moisture can penetrate. Such a connectionbetween component 3 and support 9 may be achieved, inter alia, by anodicbonding.

In the case of an optoelectronic component, what is achieved by virtueof the cavity 18 is that the photoelectric layer 7 of said component issurrounded by a medium having a low refractive index. Equally, thecavity 18 formed by means of the functional structure 11 may serve as areceptacle for a fluid, for instance in order to be able to performchemical analyses of the fluid phase using a specially adaptedsensor-technologically active and/or emitting device 7 in the form of asensor layer.

Such a cavity 18 may also serve as a resonator. By way of example, thesensor-technologically active and/or emitting device 7 may also be adevice for generating or for detecting electromagnetic radio frequencywaves microwaves or ultrasound.

Furthermore, such a cavity may also serve for improving the radiofrequency properties of the packaged component. In particular, for thispurpose, the cavity may have a medium having a dielectric constant ofequal to 1 or almost 1. By way of example, the cavity may for thispurpose be evacuated or filled with gas. The cavity may also be filledwith a low-k material for the same purpose. A low dielectric constant ofthe cavity medium helps to reduce parasitic capacitances of thesemiconductor component. Low-k materials may also generally be used ascovering materials of the support, in particular in the region of thedirect surroundings of the semiconductor component and/or the leadsthereof.

The electronic component 1 may additionally be produced in such a waythat the contacts for the connection of the component are located on theunderside 10 thereof. For this purpose, it is possible to produceplated-through holes 4 through the substrate of the semiconductorelement. Said plated-through holes may be produced for example byinserting passages into the substrate, which are subsequently filledwith a conductive material. Soldering beads 6 may be applied on theplated-through holes for the connection to a circuit board.

FIG. 1B shows a variant of the embodiment of the invention illustratedin FIG. 1A. In order to produce the electronic component 1 shown in FIG.1B, a patterned support 9 is likewise applied to a wafer with asemiconductor element and the latter is then subsequently separated, apassage opening 17 assigned to the semiconductor element 3 beinginserted in the patterned support. In the state joined together with thewafer, the passage opening defines a cavity together with the covering19 of the support 9, said cavity surrounding the surface of thesensor-technologically active or emitting device. Prior to the waferbeing joined together with the support 9, optical elements 14, such as,for example, lenses or prisms, were placed directly onto the surface ofthe sensor-technologically active or emitting device. By way of example,lenses may be produced for this purpose by means of polymer reflow onthe device 7. Thus, after the joining-together process, the cavity 18also encloses these optical elements, so that the sensor-technologicallyactive or emitting device 7 and the optical elements 14 are hermeticallysealed and protected from damage.

FIG. 2 shows a cross section through a further embodiment. Here, thefunctional structure 11 of the patterned support 9 defines a mechanicalfit 21 for an optical element. In this case, the structure 11 ispreferably embodied in the form of a trench extending along a directionperpendicular to the paper plane. The dimensions of the trench aresuitable for receiving poured spherical lenses 23, one of which is shownin the figure. The spherical lenses may be fixed with the patternedsupport 9 after filling with a transparent adhesive.

FIG. 3 shows a further embodiment of the component 1 according to theinvention, in which the patterned support 9 has a functional structure11 in the form of a mechanical fit 21. The form of the fit 21 is matchedin accurately fitting fashion to the form of an optical lens 23. Thelens may be inserted into the fit 21 after the production of thecomponent with the support. In this case, the exact seating of the lensis ensured by the accurate orientation of the patterned support 9 whichhas already been joined together with the semiconductor element 3 in thewafer composite.

FIG. 4 shows an embodiment in which the support 9 has a fit 21 servingfor receiving and positioning a waveguide 25. After the waveguide 25 hasbeen introduced into the fit 21, it can be fixed to the component 1 bymeans of an adhesive bond 29.

By means of the production according to the invention, the support 9and, connected therewith, the fit 21 can be positioned above thesemiconductor element 3 so accurately that the sensor or photo emitterlayer 7 can be kept correspondingly small, since the light-guidingwaveguide core 27 is oriented correspondingly accurately with respect tothe sensor or photo emitter layer 7 by means of the fit 21. In this way,it is also possible, accordingly, to reduce the dimensions of thecomponent or else to couple a plurality of waveguides to anoptoelectronic component with a small space requirement.

In all the preceding examples, a transparency of the patterned supportwas not absolutely necessary. The latter may therefore be produced fromsemiconductor material, for example. By way of example, the support mayalso have the same material as the semiconductor element, as a result ofwhich the component becomes less temperature-sensitive overall onaccount of the same thermal expansion coefficients.

However, the patterned support 7 may also itself have functionalstructures in the form of optical elements which are transparent to therespective type of radiation.

Such an embodiment is illustrated in FIG. 5. In this case, the support 9comprises a transparent material, such as glass, for example. In thisembodiment, the functional structure 11 comprises a lens 31, which isassigned to the sensor-technologically active and/or emitting device 7and can concentrate light emitted by the device 7 or focus lightimpinging on the component 1 on the device 7.

Besides materials transparent to visible light, such as glass, thematerial of the support may also comprise semiconducting materials, suchas GaAlAs, which are transmissive to infrared light.

FIG. 6 illustrates a variant with respect to the embodiment shown inFIG. 5. The functional structure 11 of the patterned support comprises aprism lens 31 in the variant shown in FIG. 6.

As in the preceding exemplary embodiments, the patterned support 9 mayhave not only a single layer. Rather, multilayer patterned supports arealso possible, the joining together of the support with the wafer onwhich the die for the semiconductor element is situated being effectedin the wafer composite. The multilayer support 9 may thus have, in eachof its layers, a structure which is functional for thesensor-technologically active and/or emitting device 7.

Examples of such embodiments are shown in FIGS. 7 and 8. Here, thepatterned support 9 comprises two layers 91 and 92 connected to oneanother via a further connecting layer 15. In both variants, the layer92 comprises a transparent material, such as, for instance, glass orplastic or infrared-transmissive GaAlAs, and has functional structures11 in the form of at least one lens 11.

The layer 92 serves as a spacer of the lens with respect to thesensor-technologically active and/or emitting device 7. As a functionalstructure, a passage 17 is inserted into the layer 91 and enables thelight concentrated by the lens 31 to pass from and to thesensor-technologically active and/or emitting device 7.

The variant shown in FIG. 8 differs from the variant shown in FIG. 7 inthat a prism lens is used instead of a convex lens structure as in FIG.7.

The spacer of the embodiments shown with reference to FIGS. 7 and 8permits a lower focal length for focusing and thereby reduces forexample the image errors in the plane of the sensor-technologicallyactive and/or emitting device 7.

FIG. 9 shows yet another embodiment with a multilayer patterned support.The support 9 of this exemplary embodiment comprises four layers 91, 92,93 and 94. In this case, the layers 91 and 93 are formed as a spacer ina manner similar to layer 91 of the embodiments described with referenceto FIGS. 7 and 8. Situated between these two layers is a layer having alens 31 as functional structure 11. Layer 94 has a fit 21 for awaveguide 25. With a construction of this type, it is thus possibleeither for light signals which emerge from the waveguide core 27 to befocused onto the sensor-technologically active and/or emitting device 7or for light emitted by the device 7 to be concentrated precisely on thewaveguide core 27.

The layer sequence or the functional structures of the individual layersare not, of course, restricted to the exemplary embodiments shown.Rather, these may be combined with one another as desired depending onthe intended application. In particular through the use of materialswhich are adapted to one another in terms of the thermal expansioncoefficient, it is thus also possible to produce complex and preciseoptical arrangements for optoelectronic components.

FIG. 10 illustrates an embodiment in which, in addition, thesemiconductor element itself has structures which are functional for thesensor-technologically active and/or emitting device. Accordingly, theside opposite to that side of the semiconductor element which has thesensor-technologically active and/or emitting device 7 likewise hasfunctional structures.

In this exemplary embodiment, the multilayer patterned support 9 issimilar to the embodiment shown with reference to FIG. 7.

In addition, the semiconductor element 3 has, as a functional structure,a fit for a waveguide which is fed to the component 1 from the underside10. In addition, the electronic component comprises a chip stackcomprising the semiconductor element 3 with the sensor-technologicallyactive and/or emitting device 7 and a further chip 33, onto which thechip, or the semiconductor element 3, is placed. In the same way as thejoining together with the support, the placement may likewise beeffected in the wafer composite. The further component 33 likewise has afit 21 which guides the waveguide 25 and to which the latter may beconnected by means of an adhesive joint 29, for example.

FIG. 11 shows a further embodiment of the electronic component, whichhas cavities 18 on opposite sides of the semiconductor element 3. Thecavities may be used for example as cavities for applications in radiofrequency technology. The cavities are formed by the walls of thepassage openings 17 of the patterned support 9, or respectively of thepatterned base 331, and the respective coverings. The covering of thepatterned base 331 is produced with a further base 332, while thepatterned support 9 in this embodiment is provided with a covering 19 ina manner similar to the components shown with reference to FIGS. 1A and1B.

In particular when multilayer supports are used, the overallconstruction of the parts joined together in the wafer composite mayreach a thickness which no longer readily permits conventional dicing.FIG. 12 shows a cross section through a detail from such a constructionin the wafer composite prior to dicing. The wafer 35, which has the diesfor the semiconductor elements 3 with the sensor-technologically activeand/or emitting device 7, has further wafers 36, 37, 38, 39 joinedtogether with it, which form the patterned support 9. Said supportcomprises spacers with passage openings 17 and a wafer having arefractive structure 11 in the form of integrated lenses 31. Thisconstruction affords the advantage over a solid transparent supporthaving integrated lenses that a relatively thin transparent wafer 38 canbe used for the same refractive power.

In order to be able to separate this relatively thick structurecomprising the wafers 35 to 38, it is advantageous if the wafers have,at least in part, separating points 40. The separating points areconnected to one another via individual webs 41 in order to enable thewafers to have the necessary stability for packaging or joining togetherof the wafers 35 to 38 in the wafer composite. Said webs can then beseparated in a simple manner by wet-chemical or dry-chemical etching orby sawing.

As an alternative to the patterning of separating points in the wafersbefore the joining-together process, the latter may also first be joinedtogether with their base and then be patterned. Moreover, the order ofjoining together and patterning may also alternate for the individuallayers of the support, which may be expedient for example if theindividual layers have different materials and/or thicknesses. Thus, byway of example, the first layer of the support may be joined togetherwith the semiconductor wafer, having the dies, and the patterning maythen be performed, whereupon afterward, as further layer of the support,for instance, a prepatterned layer is joined together with the firstlayer. The sequence may, of course, be modified in any desired mannerand be applied to as many layers as desired.

After the singulation or the separation from the wafer, the side wallsmay then subsequently be passivated, if appropriate. This may be donefor example by means of suitable deposition methods, such aswet-chemical deposition, vapor deposition, sputtering, CVD or PVDcoating.

Finally, the wafer stack may be subjected to surface treatment in thewafer composite. By way of example, the optical properties of the lenses31 may be improved by means of an antireflection coating or an IRcoating. Moreover, antiscratch or anticorrosion layers may be applied inorder to increase the durability. These coatings can be produced, interalia, in a known manner by means of CVD or PVD methods.

The functional structure 11 of the wafer as shown in FIG. 12, saidstructure comprising an array of lenses 31, may also be applied to thewafer stack after the latter has been produced. In this case, eitherindividual lenses, as are shown for instance in FIG. 3, may be appliedinstead of the wafer 38, or said lenses may be produced on the stack,for example as polymer reflow lenses.

List of Reference Symbols: 1 Electronic component 3 Semiconductorelement, die 4 Plated-through hole 5 Top side of the semiconductorelement 6 Soldering bead 7 Sensor-technologically active and/or emittingdevice 9 Patterned support 91,92,93,94 Layers of the patterned support10 Underside of the semiconductor element 11 Functional structure 13Underside of the patterned support 14 Optical element 15 Connectinglayer 17 Passage opening 18 Cavity 19 Covering 21 Mechanical fit 23,31Lenses 25 Waveguide 27 Waveguide core 29 Adhesive 33,331,7332Semiconductor base 35,36,37,38 Wafer 40 Separating point

1. A method for producing an electronic component, the methodcomprising: providing at least one die on a wafer, the at least one diehaving at least one sensor-technologically active and/or emitting deviceon at least a first side; producing at least one patterned supporthaving at feast one structure which is functional for the at feast onesensor-technologically active and/or emitting device; joining the waferwith the at least one patterned support so that the first side faces theat least one patterned support; producing plated-through holes throughthe wafer by inserting passages into the wafer and subsequently fillingthe passages with a conducting material; and separating the at least onedie from the wafer so that the electronic component comprises at leastone semiconductor element having the at least one sensor-technologicallyactive and/or emitting device on the first side and the at least onepatterned support covering the first side, the patterned support havingat least one structure that is functional for the sensor-technologicallyactive and/or emitting device.
 2. The method as claimed in claim 1,wherein producing the at least one patterned support comprises producinga multilayer patterned support.
 3. The method as claimed in claim 2,wherein each layer of the multilayer patterned support comprises the atleast one structure.
 4. The method as claimed in claim 2, wherein thestep of joining comprises successively joining each layer of themultilayer patterned support to the wafer.
 5. The method as claimed inclaim 1, wherein producing the at least one patterned support comprisespatterning the at least one patterned support after being joined withthe wafer.
 6. The method as claimed in claim 1, wherein producing the atleast one patterned support comprises prefabricating the at least onestructure.
 7. The method as claimed in claim 1, wherein producing the atleast one patterned support comprises lithographic patterning.
 8. Themethod as claimed in claim 7, wherein the lithographic patterningcomprises patterning selected from the group consisting of dry etching,wet-chemical etching, mechanical grinding, mechanical lapping, and anycombinations thereof.
 9. The method as claimed in claim 7, wherein thelithographic patterning comprises patterning selected from the groupconsisting of vapor deposition, sputtering, CVD coating, PVD coating,plating, stencil printing and resist coating, and any combinationsthereof.
 10. The method as claimed in claim 1, wherein producing the atleast one patterned support comprises producing a spacer for at leastone optical element.
 11. The method as claimed in claim 1, whereinproducing the at least one patterned support comprises producing areceptacle for a component selected from the group consisting of afluid, an optical element, a piezoelectric component, a microelectroniccomponent, an active electronic element, and a passive electronicelement.
 12. The method as claimed in claim 1, further comprisingproducing at least one cavity in the at least one patterned support, theat least one cavity surrounding a surface of the at least onesensor-technologically active and/or emitting device.
 13. The method asclaimed in claim 1, further comprising producing at least one trench inthe at least one patterned support, the at least one trench extending ina direction along a surface of the at least one patterned support. 14.The method as claimed in claim 1, wherein the at least one structuredefines a mechanical fit.
 15. The method as claimed in claim 14, whereinthe mechanical fit can receive an optical element.
 16. The method asclaimed in claim 1, wherein the at least one structure comprises anoptical component.
 17. The method as claimed in claim 16, wherein theoptical component is selected from the group consisting of a concavelens, a convex lens, a Fresnel lens, a prism lens, a phase grating, aprism grating, and any combinations thereof.
 18. The method as claimedin claim 1, further comprising producing at least one passage throughthe at reast one patterned support.
 19. The method as claimed in claim1, further comprising joining with at least one further support actingas a spacer.
 20. The method as claimed in claim 1, wherein the at leastone patterned support comprises a material selected from the groupconsisting of silicon, gallium arsenide, indium phosphide, quartz glass,calcium fluoride, metal, glass foam, metal foam, low-k dielectricmaterial, sapphire glass, composite material, ceramic material, plasticmaterial, and any combinations thereof.
 21. The method as claimed inclaim 1, wherein the wafer and the at least one patterned supportcomprise an identical material.
 22. The method as claimed in claim 1,wherein the at least one support and the wafer have thermal expansioncoefficients that are approximately equal to one another at interfacesfacing one another.
 23. The method as claimed in claim 1, whereinjoining the wafer with the at least one support comprises anodic bondingof the wafer to the at least one support.
 24. The method as claimed inclaim 1, wherein joining the wafer with the at least one supportcomprises adhesive bonding of the wafer to the at least one support. 25.The method as claimed in claim 24, wherein the adhesive bondingcomprises adhesive bonding with polymers and/or epoxy adhesives.
 26. Themethod as claimed in claim 1, wherein joining the wafer with the atleast one support comprises metalizing regions of the wafer and/or ofthe at least one support; and alloy soldering the metallized regions.27. The method as claimed in claim 1, wherein joining the wafer with theat least one support comprises diffusion welding and/or glass soldering.28. The method as claimed in claim 1, wherein producing the at least onepatterned support comprises producing separating points in the at leastone patterned support.
 29. The method as claimed in claim 1, furthercomprising producing at least one second structure that is functionalfor the sensor-technologically active and/or emitting device on a secondside opposite to the first side.
 30. An electronic component comprising:at least one semiconductor element having at least onesensor-technologically active and/or emitting device on at least onefirst side, the at least one semiconductor element being on a substrate;a patterned support covering the first side, the patterned supporthaving at least one structure that is functional for thesensor-technologically active and/or emitting device; and contacts forthe connection of the electronic component located on a second sideopposite to the at least one first side, wherein the contacts areconnected by plated-through holes through the substrate.
 31. Theelectronic component as claimed in claim 30, wherein the at least onestructure is a structure selected from the group consisting of a dryetching structure, a wet-chemical etching structure, a mechanicalgrinding structure, a mechanical lapping structure, a vapor depositionstructure, a sputtering structure, a CVD coating, a PVD coating, aplating structure, a stencil printing structure, a resist coating, andany combinations thereof.
 32. The electronic component as claimed inclaim 30, wherein the patterned support has a spacer.
 33. The electroniccomponent as claimed in claim 30, wherein the patterned support has atleast one receptacle.
 34. The electronic component as claimed in claim30, further comprising a mechanical fit defined by the patternedsupport.
 35. The electronic component as claimed in claim 34, whereinthe mechanical fit receives an optical element.
 36. The electroniccomponent as claimed in claim 30, wherein the patterned support isconnected to the at lease one semiconductor element by an anodic bond.37. The electronic component as claimed in claim 30, wherein thepatterned support is secured to the at least one semiconductor elementby a connection selected from the group consisting of an adhesivebonded, a solder, a diffusion-welded, and any combinations thereof. 38.The electronic component as claimed in claim 30, further comprising atleast one functional structure on a second side opposite to the firstside.
 39. The electronic component as claimed in claim 30, wherein thepatterned support has at least one passage.
 40. The electronic componentas claimed in claim 30, wherein the patterned support has a plurality oflayers.
 41. The electronic component as claimed in claim 40, whereineach layer of the plurality of layers have at least one structure thatis functional for the sensor-technologically active and/or emittingdevice.
 42. The electronic component as claimed in claim 30, wherein thepatterned support has at least one cavity.
 43. The electronic componentas claimed in claim 30, wherein the patterned support has at least onetrench-extending in a direction along a surface of the patternedsupport.